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Abstract
In this paper, we study the temperature dependence of the barrier height for amorphous-silicon-Au Schottky barriers between 150 and 400 K for doped and undoped samples. We find that the temperature dependence of the barrier height is similar to that expected for the band gap. This suggests (a) the barrier height is pinned by surface states which are ‘valence band’ like and (b) the temperature dependence of the mobility edge is similar to that of the band gap in these samples.