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Abstract
The quantization of electron states in small semiconductor structures such as the GaAs FET/JFET and the split-gate AlGaAs/GaAs heterojunction FET is reviewed. Depopulation of subbands by means of an applied voltage is discussed in terms of 3D-2D and 2D-ID dimensional cross-over. Implications for disorder and electric transport are briefly described. Magnetic depopulation of subbands is shown to be a convenient way of observing subband structure in electric transport.