The oxidation of silicon by dry oxygen can we distinguish between models?

Abstract

The purpose of this work is to examine why there is no consensus about the mechanisms controlling the oxidation of silicon by dry oxygen. It is shown that the time dependence of the oxide thickness is empirically never linear. It is argued that the parameters characterizing current models are known only within broad limits and that a wide range of physically distinct models have very similar mathematical forms. Two different physical models are scrutinized in detail, with the conclusion that they are in fact formally identical. Physical inconsistencies in such models are pointed out. Finally, some experiments which may ameliorate this situation are suggested.