Oxidation under electron bombardment a tool for studying the initial states of silicon oxidation

Abstract

The exciting beam of an Auger electron spectrometer has been used to monitor the oxidation of silicon single crystals at room temperature and very low pressures of oxygen (≃ 10⁻⁷ Torr). This process allows us to build ultra-thin layers of silica on silicon {down to 30 Å) but it is mostly used to investigate the mechanisms of the initial stages of oxidation. Auger spectra recorded continuously during the oxidation process provide information on (1) the nature of the silicon–oxygen chemical bonds which are interpreted through fine structure in the Auger peak, and (2) the kinetics of oxide formation which are deduced from curves of Auger signal versus time. An account is given of the contribution of these Auger studies to the description of the intermediate oxide layer during the reaction between silicon and oxygen and the influence of surface structural disorder, induced mainly by argonion bombardment, is discussed in terms of reactivity and oxide coverage.