The X-ray K absorption edges of Ge and Se in Ge₂₂Se_78−xBi_x glasses and amorphous films

Abstract

The X-ray K absorption edges of Ge and Se in glassy Ge₂₂Se_78−x Bi _x with x =0, 2 and 10 have been studied in bulk as well as in thin-film form. In both cases, we find that, at a low concentration of Bi (x =2), the Se K edge shifts while that of Ge remains unchanged. On the other hand, at a higher concentration of Bi (x = 10), the reverse happens. The results indicate different kinds of bonding at low and high concentrations of Bi. The results are in agreement with those of other workers who drew similar conclusions from the electrical properties.