Abstract
The effect of gas-phase doping with boron and phosphorus on the structure of glow-discharge amorphous hydrogenated silicon has been studied by means of energy-filtered electron diffraction. The reduced density function was calculated and the network was found to contract upon doping. At levels of less than 20 at.% neither boron nor phosphorus segregated from the network. At high phosphorus doping levels an amorphous chemically ordered structure corresponding to Si2P was formed. At high boron doping levels, evidence for the presence of boron icosahedra was obtained.