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Abstract
Single crystals of semiconducting SmS, grown by a Bridgman method, have been compressed at room temperature by a few per cent, and the effects of deformation on the electrical conductivity have been investigated between room and liquid-helium temperatures. For deformed crystals, the conductivity measured below 20 K in a direction parallel to the edge dislocations is orders of magnitude larger than that of the undeformed crystals. This increase is interpreted in terms of the existence of a metallic region along the core of the edge dislocation. The activation energy of the conductivity at around liquid-nitrogen temperature exhibits an anisotropy after deformation, which is explained by segregation of donor Sm interstitials in the strain field of edge dislocations.