Structure of iodine-doped poly-GeO-phthalocyanine epitaxial film and its lattice defects studied by direct atom imaging

Abstract

The process of iodine doping into poly-GeO-phthalocyanine (GeOPc) thin films has been studied by high-resolution electron microscopy (2•0 Å resolution; 200 kV). The doped GeOPc is isomorphic with NiPc-, CoPc-, FePc-, H₂Pc-halogen complexes. The doping is initiated from the stackin fault plane and the expansion of the lattice due to the penetration of iodine is 2•6 Å at the faulted planes while it is only 0•2 Å in the regular part of the crystal. The molecular arrangement and iodine position at the defect are directly determined visually.