Characterization of hydrogenated amorphous Ga_xAs_1−x thin films

J. Bandet Laboratoire de Physique des Solides (Unité associée au CNRS 0074), Université Paul Sabatier, 31062, Toulouse Cédex, France

J. Frandon Laboratoire de Physique des Solides (Unité associée au CNRS 0074), Université Paul Sabatier, 31062, Toulouse Cédex, France

G. Bacquet Laboratoire de Physique des Solides (Unité associée au CNRS 0074), Université Paul Sabatier, 31062, Toulouse Cédex, France

K. Aguir Laboratoire de Génie Electrique (Unité associée au CNRS 304), Université Paul Sabatier, 31062, Toulouse Cédex, France

B. Despax Laboratoire de Génie Electrique (Unité associée au CNRS 304), Université Paul Sabatier, 31062, Toulouse Cédex, France

A. Hadidou Laboratoire de Génie Electrique (Unité associée au CNRS 304), Université Paul Sabatier, 31062, Toulouse Cédex, France

Abstract

Thin films of hydrogenated amorphous Ga_xAs_1−x (0·01 < x < 0·75) prepared by an original method of reactive sputtering have been characterized by various methods: electron microdiffraction, Raman spectrometry, secondary-ion mass spectrometry analysis and optical measurements. From the dependence of the absorption coefficient on photon energy, the optical gap has been deduced according to the Taw law. The influence of hydrogenation on the absorption is briefly discussed.

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Characterization of hydrogenated amorphous Ga_xAs_1−x thin films

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Characterization of hydrogenated amorphous GaxAs1−x thin films

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Characterization of hydrogenated amorphous Ga_xAs_1−x thin films