Kinetics of the room-temperature air oxidation of hydrogenated amorphous silicon and crystalline silicon

Abstract

An X-ray photoelectron spectroscopy determination of the room-temperature air oxidation of both hydrogenated amorphous silicon and crystalline silicon has shown that the log-log (complex order) kinetics depend on the method of surface preparation. For HF-etched surfaces, the slope is identical with those measured at significantly higher temperatures (about 1000°C). For Ar-etched surfaces, the structural damage thereby incurred gives significantly higher rates.