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Original Articles

Defect states in plastically deformed n-InP

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Pages 565-573 | Received 20 Sep 1988, Accepted 27 Feb 1989, Published online: 20 Aug 2006
 

Abstract

We have studied defects in n-type InP before and after generation of dislocations by indentation using deep-level transient spectroscopy (DLTS). After plastic deformation, two major defects with activation enthalpies of 0·46 and 0·68 eV, and two minor ones with activation enthalpies of 0·40 and 0·17 eV, are found. Comparison with line spectra which have been identified in the literature gives the first hints about the identity of the major defects (CrIn and FeIn). From the capture characteristics it follows that one of them is grouped into clouds; the other is more homogeneously distributed. Probably both defects are generated in the wake of moving dislocations.

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