Interface defects in a-Si: H/a-Si₃N₄: H superlattices as elucidated from photothermal deflection spectroscopy measurements

Abstract

Interface defects in a-Si: H/a-Si₃N₄: H superlattices have been investigated by photothermal deflection spectroscopy measurements. In combination with results from electron spin resonance measurements, we conclude that most of the interface defects are not paramagnetic. We propose that defects other than neutral silicon dangling bonds are dominant at the interfaces.