Abstract
The effects of space charge on carrier transport in a-Si: H: F/a-SiGex: H: F multilayer structures with various doping levels have been investigated by means of steady-state and transient photocurrent measurements. The width of the depletion layer associated with a Pt Schottky contact for multilayers with PH, doping below 5 p.p.m. is almost the same as that in a-Si: H.
Time-of-flight studies show that transport and relaxation of photo-induced electrons are not affected by space charge in the well layers, indicating that dielectric relaxation in these conducting layers is negligible.