Abstract
The transport mechanism across a-Si:H/a-Si1−xCx:H multilayers has been investigated. For n-type well layers, room-temperature tunnelling currents are demonstrated. On the basis of electrical properties of a newly devised structure, it is found that the tunnelling electrons are hot electrons. In a-Si: H/a-Si0·2C0·: H multilayers with p-type well layers, the space-charge-limited conduction is dominant. This result indicates that the band discontinuity in the valence band is not a barrier to hole transport.