Optical properties of amorphous semiconductor multilayer films with random-thickness well layers

S. Nitta Department of Electronic and Computer Engineering, Gifu University, 1-1 Yanaido, Gifu, 501-11, Japan; Department of Physics, The University of Utah, 201, James Fletcher Building, Salt Lake City, Utah, 84112, U.S.A.

T. Itoh Department of Electronic and Computer Engineering, Gifu University, 1-1 Yanaido, Gifu, 501-11, Japan

S. Nonomura Department of Electronic and Computer Engineering, Gifu University, 1-1 Yanaido, Gifu, 501-11, Japan

H. Ohta Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku, Tokyo, 106, Japan

K. Morigaki Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku, Tokyo, 106, Japan

Abstract

The optical properties of multilayer films in which the thicknesses of the well layers are randomly distributed have been studied. Two effects associated with randomness were observed in the optical spectra of these films. One of these is a distortion of the interference patterns in reflectance and transmittance spectra, and the other is a unique disorder-related reflection peak. The effects are discussed briefly.

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Optical properties of amorphous semiconductor multilayer films with random-thickness well layers

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Optical properties of amorphous semiconductor multilayer films with random-thickness well layers

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