Abstract
The temperature dependences of the luminescence spectrum, luminescence efficiency and luminescence intensity decay for a-Si: H/a-Si3N4: H superlattices are reported as a function of the well-layer thickness L w. The results are discussed in terms of thermal quenching processes, taking into account an enhanced broadening of the conduction-band tail with decreasing L w, the presence of non-radiative interface defects and the effect of confinement of electrons and holes.