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Philosophical Magazine B Volume 60, 1989 - Issue 1
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Original Articles

Photo-induced absorption in a-Si: H/a-Si3N4: H superlattices

Hiroshi Ohta Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, 106, Japan
&
Kazuo Morigaki Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, 106, Japan
Pages 153-158 | Published online: 20 Aug 2006
 

Abstract

The depth of the trapped hole centre (A-centre) level relative to the edge of the valence band in a-Si: H/a-Si3N4: H superlattices has been measured as a function of the well-layer thickness from photo-induced absorption measurements. The results are interpreted in terms of a quantum-well model.

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