Abstract
The gap-state densities of a-Si:H at low temperatures and after light exposure have ken measured by the space-charge-limited current method. For the annealed samples, two peaks, which possibly correspond to isolated dangling-bond states and Si-Si bond states with the larger bond angles, appear in the distribution curve N(E) of gap-state density measured at 100 K. Low-temperature (100 K) light exposure enhances the whole N(E) curve and accentuates the light-induced effect.