Abstract
We present new results on microwave continuous-wave (c.w.) conductivity investigations of plastically deformed floating-zone (FZ) silicon single crystals. N-type samples with various doping and deformation levels were investigated by the cavity perturbation technique. The anisotropy and absolute values turn out to be very sensitive to experimental conditions but on the whole the one-dimensional nature of dislocation conduction is confirmed. The C.W. anistropy follows the respective dislocation structure anisotropy closely. For clear results, care has to be taken of the number of deep point-defect centres also introduced by deformation. Furthermore the existence of a low-temperature conducting state is shown for a Czchrochalski (CZ) sample annealed at 650°C containing rod-like defects.