Growth mode transitions in Si molecular beam epitaxy on (100) and (111) substrate surfaces

Abstract

Growth modes of Si-MBE are studied as a function of substrate temperatures on both Si(100) and Si(111). Epitaxy takes place at temperatures of 0.28 T _m, for the (100) substrate, and 037T _m for the (111) substrate, where T _m is the melting temperature of bulk Si. The difference in epitaxy starting temperatures between the substrates is probably due to the difference in the surface reconstruction structure. Furthermore, high quality crystalline epitaxial layers grow at above 0·52 T _m for both substrates. By comparing these results with those of the various MBE material systems, e.g., Si on Si for (100) and (111), GaAs on GaAs for (100) and (111), Nisi₂ on Si for (111) and InP on InP for (100), the MBE growth law, in which growth modes change at temperatures of n/4 T _m (n=1 and 2), is found to be mostly consistent for each system.