Abstract
When Al is deposited on to Si(001) by sputtering, the Al(110)/Si(001) epitaxial relationship is realized. Its crystallography has been analysed from the viewpoint of lattice match geometry and misfit strain energy. From these analyses, it has been found that the adoption of the idea of superlattice unit cells is useful in considering the lattice correspondence between A1 Si planes at the interface. With this idea, together with previously-proposed simple criteria, the crystallography of the Al(110)/Si(001) epitaxy has been explained successfully.