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Philosophical Magazine B Volume 64, 1991 - Issue 4
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Original Articles

Light scattering from defects in crystals: Scattering by dislocations

Kazuo Moriya Corporate Research and Development, Mitsui Mining & Smelting Co., Ltd, 1333-2 Haraichi, Ageo-shi, Saitama-ken, 362, Japan
Pages 425-445 | Received 03 Apr 1991, Accepted 16 Apr 1991, Published online: 20 Aug 2006
 

Abstract

A basic equation for light scattering by anisotropic scatterers in crystals is obtained using the Born approximation and applied to the scattering behaviour from edge dislocations in sapphire crystals. The orientation and polarization direction dependences of the scattered light, measured by laser scattering tomography, are compared with the calculated results and it is confirmed that the scattering is generated by changes in the dieletric constant caused by the strain field around the dislocation lines.

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