Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

R. W. van der Heijden Department of Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB, Eindhoven, The Netherlands

G. Chen Department of Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB, Eindhoven, The Netherlands

A. T. A. M. De Waele Department of Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB, Eindhoven, The Netherlands

H. M. Gijsman Department of Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB, Eindhoven, The Netherlands

F. P. B. Tielen Department of Electrical Engineering, EFFIC Eindhoven University of Technology, The Netherlands

Abstract

Current-voltage characteristics are reported for ion-implanted Si:As, with As concentrations about 10% below the concentration of the metal-insulator transition, in the temperature range 007-1K. The data are analysed with both an electric-field-assisted hopping model and a heating model. It follows that, at least at the lowest temperatures (non-equilibrium), heating is the dominant effect.

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Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

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Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

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