Stress-induced refractive index variation in dry SiO₂

A. Szekeres Institute of Solid State Physics, Bulgarian Academy of Sciences, Boulevard Lenin 72, Sofia, 1784, Bulgaria

K. Christova Institute of Solid State Physics, Bulgarian Academy of Sciences, Boulevard Lenin 72, Sofia, 1784, Bulgaria

A. Paneva Sofia University, Faculty of Physics, Boulevard A. Ivanov 5, Sofia, 1126, Bulgaria

Abstract

The refractive index in thermally grown dry SiO₂ at 850°C has been studied by means of ellipsometry. It is found that the index is not constant throughout the oxide, but varies in a relatively broad region above the Si-SiO₂ interface. This variation is caused by an intrinsic stress induced during the oxidation process.

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Stress-induced refractive index variation in dry SiO₂

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Stress-induced refractive index variation in dry SiO2

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Stress-induced refractive index variation in dry SiO₂