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Abstract
The constant photocurrent method and small-angle X-ray diffraction have been used in order to study the changes in the interfaces of Se/CdSe multilayers as well as in the structural disorder of CdSe sublayers after annealing. An improvement of the interface quality accompanied by a decrease of the Urbach edge parameter EU has been found after annealing the multilayers with sublayer thicknesses smaller than 5 nm at Ta < 360 K. An EU increase accompanied by a deterioration of the interface quality has been obtained after annealing at Ta > 360 K. In the multilayers with sublayer thickness of 10 nm, a monotonous increase of EU has been observed. In addition, the photoconductivity of all specimens has been increased after annealing at Ta > 350 K. Crystallization has not been observed. Phase separation, Cd atomic diffusion into the Se sublayers and structural disorder changes in the CdSe sublayers have been considered as possible reasons for the complicated alterations in the multilayers after annealing.