Microstructure of Ba_0.5Sr_0.5TiO₃ thin films on (100) LaAlO₃ with SrRuO₃ as electrodes

Q. X. Jia Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, New Mexico, 87545, USA

D. S. Zhou Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, New Mexico, 87545, USA

S. R. Foltyn Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, New Mexico, 87545, USA

X. D. Wu Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, New Mexico, 87545, USA

A. T. Findikoglu Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, New Mexico, 87545, USA

J. L. Smith Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, New Mexico, 87545, USA

Abstract

Using pulsed-laser deposition, We grew quaternary Ba_0.5Sr_0.5TiO₃ thin films heteroepitaxially on (100) LaAlO₃ substrates with conductive SrRuO₃ as a bottom electrode. The microstructure of this multilayer of Ba_0.5Sr_0.5TiO₃/SrRuO₃/LaAlO₃, was characterized by X-ray diffraction and cross-sectional transmission electron microscopy. The heteroepitaxial growth relationship was found to be (h00)Ba_0.5Sr_0.5TiO₃‖(00l)SrRuO₃‖(h00)LaAlO₃ and (110)Ba_0.5Sr_0.5TiO₃‖⟨100⟩SrRuO₃‖⟨110⟩LaAlO₃. The high dielectric constant of the crystalline Ba_0.5Sr_0.5TiO₃ thin films and the low leakage current of the Ba_0.5Sr_0.5TiO₃ film sandwiched between a top Au and bottom SrRuO₃ electrodes are attributed to the structural perfection of the films and the clean interfaces between layers.

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Microstructure of Ba_0.5Sr_0.5TiO₃ thin films on (100) LaAlO₃ with SrRuO₃ as electrodes

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Microstructure of Ba0.5Sr0.5TiO3 thin films on (100) LaAlO3 with SrRuO3 as electrodes

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Microstructure of Ba_0.5Sr_0.5TiO₃ thin films on (100) LaAlO₃ with SrRuO₃ as electrodes