Abstract
A method is presented for determining the diffusion coefficients of donors at relatively low temperatures in p-type semiconductors. This method is based on capacitance transient measurements at different temperatures. The law describing the capacitance transient is given, allowing the determination of the donor diffusion coefficient. The study of Cu and Ag diffusion in Hg1−xCd x Te (x = 0.7 and x = 1) is presented as an example. Diffusion data are in good agreement with previous results. In the case of Ag, a change in slope has been found in the Arrhenius plots. A mechanism which involves acceptor-donor complex formation is proposed to explain such behaviour.