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Philosophical Magazine B Volume 77, 1998 - Issue 2
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Original Articles

Preparation of SiO2—GeO2: Eu3+ planar waveguides and characterization by waveguide Raman and luminescence spectroscopies

C. Duverger Laboratoire de Spectrochimie Infrarouge et Raman (Unite de Recherche associée au CNRS, A2631L), Bǎtiment C-5, Centre d'Etudes et de Recherches Lasers et Applications, Université des Sciences et Technologies de Lille, 59655, Villeneuve d'Ascq Cedex, France; Consiglio Nazionale delle Richerche Centro Fisica Stati Aggregati, via Sommarive 14, 38050, Povo (Trento), Italy
,
S. Turrell Laboratoire de Spectrochimie Infrarouge et Raman (Unite de Recherche associée au CNRS, A2631L), Bǎtiment C-5, Centre d'Etudes et de Recherches Lasers et Applications, Université des Sciences et Technologies de Lille, 59655, Villeneuve d'Ascq Cedex, France
,
M. Bouazaoui Laboratoire de Spectroscopie Hertzienne (Unité de Recherche associée au CNRS 249), Bǎtiment P-5, Centre d'Etudes et de Recherches Lasers et Applications, Université des Sciences et Technologies de Lille, 59655, Villeneuve d'Ascq Cedex, France
,
F. Tonelli Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo (Trento), Italy
,
M. Montagna Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo (Trento), Italy
&
M. Ferrari Consiglio Nazionale delle Richerche Centro Fisica Stati Aggregati, via Sommarive 14, 38050, Povo (Trento), Italy
Pages 363-372 | Published online: 13 Aug 2009
 

Abstract

SiO2—GeO2 planar waveguides, doped with Eu3+ ions, have been prepared using the dip-coating technique. Optical characterization of the waveguides has been performed by m-line spectroscopy. The structural modification occurring during the densification process has been followed by waveguide Raman and luminescence spectroscopies. A strong rearrangement in the glass occurs after annealing at 900°C and the final structure appears more ordered.

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