Abstract
In this paper, we have investigated the current-voltage (I-V) characteristics of crystalline Si (c-Si)/porous Si/metal structures for different substrate resistivities from 0.01 to 75ωcm. We find that the I-V characteristics for low-resistivity samples are nonlinear and pseudosymmetric. For samples with a substrate resistivity greater than 1ωcm, the I-V characteristics exhibit rectifying behaviour. The I-V characteristics of the latter samples are weakly dependent on temperature. We present a model which invokes tunnelling to explain electronic transport in this system.