Modelling and simulating charge sensitive mos circuits

Abstract

We show how charge distribution effects in MOS transistors are reflected only correctly by models based on the physical properties of the device. Hence one has to consider carefully the impact of modelling to obtain correct results for MOS circuits by numerical simulation. Additionally, the choice of an appropriate integration scheme is essential for both reliable and efficient simulation results. To spotlight these influences, we use a charge pump as an instructive test circuit and discuss a variety of modelling approaches.

Keywords:

• CAD-package
• capacitance and charge models
• charge distribution effects
• efficient and reliable integration scheme
• electric circuit simulation
• modelling level
• MOS transistor

^∗TH Darmstadt, Fachbereich Mathematik, Schloßgartenstr. 7, D-64289 Darmstadt, Germany.

^†TU Miinchen, Mathematisches Institut/FORTWIHR, D-80290 Miinchen, Germany. The author is supported by FORTWMR: Bavarian Consortium for High-Performance Scientific Computing.

^‡siemens AG, Corporate Research & Development, Otto-Hahn-Ring 6, D-81739 Miinchen, Germany.

^∗TH Darmstadt, Fachbereich Mathematik, Schloßgartenstr. 7, D-64289 Darmstadt, Germany.

^†TU Miinchen, Mathematisches Institut/FORTWIHR, D-80290 Miinchen, Germany. The author is supported by FORTWMR: Bavarian Consortium for High-Performance Scientific Computing.

^‡siemens AG, Corporate Research & Development, Otto-Hahn-Ring 6, D-81739 Miinchen, Germany.

Notes

^∗TH Darmstadt, Fachbereich Mathematik, Schloßgartenstr. 7, D-64289 Darmstadt, Germany.

^†TU Miinchen, Mathematisches Institut/FORTWIHR, D-80290 Miinchen, Germany. The author is supported by FORTWMR: Bavarian Consortium for High-Performance Scientific Computing.

^‡siemens AG, Corporate Research & Development, Otto-Hahn-Ring 6, D-81739 Miinchen, Germany.