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Abstract
This paper presents a noise model using the channel length modulation (CLM) effect to calculate the total equivalent noise current, referred to the gate (input) of the MOSFET. It is shown here that for short channel MOSFETs the total input noise depends on the electron warming in the channel, the voltage fluctuations due to the gate polysilicon resistance, and the induced thermal noise at the gate. Taking velocity saturation effect and carrier heating effect in the gradual channel region, complete thermal noise modelling of short-channel MOSFETs including the induced gate noise and its correlation coefficients is presented.
Additional information
Notes on contributors
S Choudhary
Sudhanshu Choudhary was born in Lucknow, India, in 1980. He received Bachelor degree in Electronics and Communication Engineering from Birla Institute of Technology, MESRA Ranchi, India in 2002 and Master from Indian Institute of Information Technology & Management Gwalior, India in 2006.
At present he is doing PhD in the department of Electrical Engineering at IIT Kanpur. His research interests have been Microelectronics, VLSI testing and Physical Design.
S Qureshi
Shafi Qureshi was born in Srinagar, India, in 1953. He received Bachelor degree in Electrical Engineering from University of Kashmir in 1974 and PhD from University of California, Berkeley in 1991. He joined IIT Kanpur in 1992 and became professor in the department of Electrical Engineering in 1997. His research interests have been semiconductor device physics and modeling, thin film transistors and VLSI design.
He is senior member of IEEE and fellow of Institution of Electronics and Telecommunication Engineers (IETE) India.