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Philosophical Magazine Volume 83, 2003 - Issue 27
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Original Articles

Crack initiation and termination in III-V epitaxial layers

R.T. Murray Materials Science and Engineering, Department of Engineering, The University of Liverpool, Liverpool, L69 3GH, UKCorrespondence[email protected]
,
G. Hill Department of Electronic and Electrical Engineering, The University of Sheflield, Sheffield, SI 4DU, UK
,
M. Hopkinson Department of Electronic and Electrical Engineering, The University of Sheflield, Sheffield, SI 4DU, UK
&
P. J. Parbrook Department of Electronic and Electrical Engineering, The University of Sheflield, Sheffield, SI 4DU, UK
Pages 3077-3092 | Received 17 Apr 2002, Published online: 20 Oct 2008
 
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Abstract

Cracks in III-V epitaxial layers of cubic and hexagonal semiconductors have been studied to elucidate mechanisms of nucleation and termination. Pre-existing intersecting cracks and oval defects are very effective terminators. Cracks can be initiated at scribe marks and deep pits with clearly defined facets. However, for the majority of cracks propagated during the growth phase an additional nucleation feature which permits a crack to grow outwards in opposite directions is required but has not yet been observed.

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