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Abstract
The temperature and field dependences of in-plane (IP) and out-of-plane (OP) anisotropic magnetoresistances (AMRs) have been measured in La1 − x Pb x MnO3 (LPMO) thin films having different microstructures, namely the single-crystal (SC), nanocrystalline (NC) and polycrystalline (PC) microstructures. The OP AMR, irrespective of the microstructure, is found to be considerably larger than the IP AMR. The magnetization data show that the larger OP AMR arises because magnetization is favoured in the film plane owing to strain anisotropy. In addition, the temperature and field dependences of both IP and OP AMRs are governed by the crystallinity of the films, indicating that the AMRs are strongly influenced by the magnetization process.
Acknowledgement
The authors thank M. D. Mukadam for making Vibrating-Sample Magnetometer measurements.