Resonant tunnelling lifetime in the semiconductor superlattice

Abstract

The fundamental physics of the resonant tunnelling lifetime (RTL) in superlattices have been theoretically studied. The modelling of this RTL is based on a relationship between the resonant tunnelling and the half-width at half-maximum of the transmission peak. The lifetime of resonant states and the current density accompany the resonant tunnelling change as a function of mole fraction of the barrier layer, well width and barrier width. The energies and the lifetime of the electrons at the resonant states are correlated with the band structure of the superlattices. It is seen that the variation in RTL with resonance energy has a special minima, and that these minima occur around the centre of the allowed bands.

Acknowledgements

The authors would like to acknowledge Professor S. T. H. Abidi for illuminating discussion. The research is supported by US Air Force Office of Scientific Research.