Abstract
Pb(Zr0.52Ti0.48)O3 (PZT) amorphous thin films were deposited on Si substrates at room temperature and 573 K by pulsed laser deposition. The as-deposited films were subsequently annealed at various laser power densities using a KrF pulsed excimer laser irradiation to induce the phase transformation from amorphous to ferroelectric perovskite structure. Structural analysis shows the possibility of transformation from pyrochlore to perovskite transformation when irradiated above a laser power density of 1.4 MW/cm2, which is in agreement with the thermal simulation. The surface quality of the PZT films deposited on 573 K is remarkably superior to that deposited at room temperature due to the enhanced thin structure and composition homogeneity. Almost all the pyrochlore phase transformed into perovskite structure after annealing at 2.8 MW/cm2 for 120 s for both PZT films deposited at room temperature and 573 K, respectively. P-E hysteresis measurement of the laser-treated PZT shows relatively low remnant polarization P r of about 1.2 μC/cm2.
Acknowledgements
This research was supported by Advanced Materials for Micro- and Nano-System program under Singapore-MIT Alliance Programme and by National University of Singapore.