Interface reactions in a chromium buffer layer deposited between stainless steel and a silicon substrate

Abstract

The microstructure of a Cr buffer layer between a stainless steel (SS) layer, which is a catalytic layer for carbon nanotube growth, and a Si (100) substrate was investigated by high-resolution transmission electron microscopy. The SS film is polycrystalline, and the thickness is not uniform. It was partly covered by a surface Cr₂O₃ layer. The Cr buffer layer reacted with the Si substrate to form CrSi₂. Definite orientation relationships (ORs) between CrSi₂ and Si were observed:

(OR D) and

(OR A). OR D is a new OR found in the CrSi₂/Si system. We also found several other new ORs which are similar to OR A and are denoted OR E, OR F, OR G, and OR H. For OR E and OR F, the CrSi₂ crystals are rotated, respectively, about 18° and 34° counterclockwise around the

zone axis with respect to OR A. For OR G and OR H, the CrSi₂ crystals are rotated, respectively, about 35° and 107° clockwise around the

zone axis with respect to OR A. These findings not only enrich the crystallography of the CrSi₂/Si epitaxial system, but also provide new insight into the role of the Cr buffer layer in the growth of carbon nanotubes.

Notes

Corresponding author. Email: [email protected]

Additional information

Notes on contributors

Z. F. Ren *

Corresponding author. Email: [email protected]