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Abstract
In situ straining experiments in a transmission electron microscope provide a unique way to investigate in real time the influence of various parameters (temperature, electron beam intensity, etc.) on the dislocation behaviour in semiconductors. A systematic study of the influence of electronic excitation on the dislocation behaviour in single phase ZnS crystals is reported. The observed radiation enhanced dislocation motion is attributed to a lowering of the lattice friction, due to non-radiative recombination of carriers at electronic levels associated with dislocations. Analysis of the results makes it possible to determine which elementary mechanism of dislocation glide is affected by this effect. The defect dynamics in a ZnSe/GaAs heterostructure in the course of in situ heating experiments is investigated. Different dislocation mechanisms are analyzed, which emphasize the influence of electronic excitation on the dislocation behaviour. The contribution of these mechanisms to the strain relaxation is discussed.
Notes
§ Present address: Altis Semiconductors 224 Bd John Kennedy, 91105 Corbeil Essonnes, France.