Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments

Abstract

Microstructural characterization by transmission electron microscopy of the {111} planar defects induced in Si by treatment in hydrogen plasma is discussed. The {111} defects are analyzed by conventional (TEM) and high-resolution transmission electron microscopy (HRTEM). Quantitative image processing by the geometrical phase method is applied to the experimental high-resolution image of an edge-on oriented {111} defect to measure the local displacements and strain field around it. Using these data, a structural model of the defect is derived. The validity of the structural model is checked by high-resolution image simulation and comparison with experimental images.

Acknowledgements

This work is part of the bilateral Flemish–Romanian research project BIL 01/73, with support from the Romanian Ministry of Education and Research (project CERES 4-43/2004).