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Philosophical Magazine Volume 87, 2007 - Issue 2
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Original Articles

Structural defects in Cu-doped Bi2Te3 single crystals

J. Bludská Institute of Inorganic Chemistry, Academy of Sciences of the Czech Republic, 250 68 Řež, Czech Republic
,
I. Jakubec Institute of Inorganic Chemistry, Academy of Sciences of the Czech Republic, 250 68 Řež, Czech Republic
,
Č. Drašar University of Pardubice, Čs. Legií 565, 532 10 Pardubice, Czech RepublicCorrespondence[email protected]
,
P. Lošťák University of Pardubice, Čs. Legií 565, 532 10 Pardubice, Czech Republic
&
J. Horák Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, and University of Pardubice, Studentská 84, 530 09 Pardubice, Czech Republic
Pages 325-335 | Received 13 Dec 2005, Accepted 29 Aug 2006, Published online: 01 Dec 2006
 
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Abstract

The relation between the concentration of free charge carriers and the concentration of copper atoms in Bi2Te3 single crystals doped with copper over a wide range of concentrations has been investigated, with the aim of clarifying the existence of inactive Cu ions. Changes in the concentration of free charge carriers arising from Cu-doping of the melt with that induced by electrochemical intercalation of copper are compared. Models of possible defect structures are proposed for both doped and intercalated single crystals of Bi2Te3.

Acknowledgements

The financial support of the Academy of Sciences of the Czech Republic (Research Plan AV0Z40320502), the Ministry of Education, and Youth and Sports (project MSM 0021627501 and project LC523) is gratefully acknowledged.

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