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Philosophical Magazine Volume 87, 2007 - Issue 13: Intentional and Unintentional Localization in InGaN
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Original Articles

Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques

S. F. Chichibu¥ Institute of Applied Physics and 21st Century COE office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan; Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, JapanCorrespondence[email protected]
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A. Uedono Institute of Applied Physics and 21st Century COE office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan; Nanomaterials Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0003, Japan
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T. Onuma Institute of Applied Physics and 21st Century COE office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan; Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
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B. A. Haskell Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
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A. Chakraborty Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
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T. Koyama Institute of Applied Physics and 21st Century COE office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan; Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
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P. T. Fini Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
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S. Keller Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
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S. P. Denbaars Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
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J. S. Speck Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
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U. K. Mishra Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
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S. Nakamura Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
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S. Yamaguchi High-Tech Research Centre, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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S. Kamiyama High-Tech Research Centre, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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H. Amano High-Tech Research Centre, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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I. Akasaki High-Tech Research Centre, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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J. Han Technical Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
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T. Sota Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Japan
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Pages 2019-2039 | Received 14 Aug 2006, Accepted 16 Jan 2007, Published online: 17 May 2007
 
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Abstract

A principal origin of the defect-insensitive emission probability of In-containing three-dimensional (3-D) bulk (Al,In,Ga)N alloy films, such as InGaN, AlInN and AlInGaN, is proposed. In contrast to In-free GaN or AlGaN, In-containing films grown on sapphire substrates show significant emission probabilities, although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional (Al,In,Ga)(As,P) light-emitting-diode films. According to the extremely short diffusion lengths of positrons (<4 nm) and short radiative lifetimes of excitonic emissions, we conclude that capturing of holes by localized valence states associated with atomic condensates of In–N outrun the trapping by non-radiative recombination centres, which are defect complexes associated with group III vacancies, because holes and positrons have the same positive charge. The captured holes are considered to form localized excitons with surrounding electrons to emit the light. The enterprising use of atomically inhomogeneous crystals is proposed for future innovation in light emitters even when using defective crystals.

Acknowledgments

This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” under MEXT, Japan.

Notes

¥ Present address: Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan.

Additional information

Notes on contributors

S. F. ChichibuFootnote¥

¥ Present address: Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan.

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