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Abstract
A theoretical model is suggested which describes the nucleation of cracks at triple junctions of grain boundaries (GBs) in polysilicon materials deformed at low temperatures. In the framework of the model, cracks nucleate in the stress fields of defects located at triple junctions and formed due to intense GB sliding. It is shown that the nucleation of cracks at triple junctions can occur in polysilicon in quasistatic and non-symmetric cyclic load regimes.
Acknowledgments
The work was supported by the Sandia National Laboratories (Contract No. 499338), Russian Science Support Foundation, Federal Agency of Science and Innovations (grant of the President of the Russian Federation MK-8340.2006.1), and Russian Academy of Sciences Program ‘Structural Mechanics of Materials and Construction Elements’.