Transmission electron microscopy studies on structure and defects in crystalline yttria and lanthanum oxide thin films grown on single crystal sapphire by molecular beam synthesis

Abstract

The Molecular beam synthesis and characterization are reported for Y₂O₃ thin films grown on Al₂O₃ (0001) substrate. The Y₂O₃ layer was highly oriented in the [111] direction with predominant orientation relations (111) Y₂O₃ ‖ (0001) Al₂O₃ and [110] Y₂O₃ ‖ [2110] Al₂O₃, corresponding to a lattice mismatch of ∼20% at the interface. No significant interfacial layers were found at the Y₂O₃/Al₂O₃ interface and the large lattice misfit was accommodated by formation of stacking faults, dislocations and secondary orientation in the Y₂O₃ layer. A La₂O₃ interlayer improved the quality of the Y₂O₃ films. Full width at half maximum (FWHM) of the Y₂O₃ (222) peak decreased from 3.12° to 1.43° and the defect density in the Y₂O₃ layer was significantly reduced. These results may be relevant in the broader context of designing oxide heterolayers with controlled microstructures.

Keywords:

• molecular beam epitaxy
• yttria
• transmission electron microscopy
• oxygen vacancy ordering

Acknowledgements

The authors thank Dimitris Kazazis (Brown University) for assistance with sample growth. MT and SR acknowledge funding from the Global Climate and Energy Project that supported this work.