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Part A: Materials Science

α-In2S3 and β-In2S3 phases produced by SILAR technique

, , , &
Pages 1716-1726 | Received 04 Nov 2011, Accepted 05 Jan 2012, Published online: 07 Feb 2012
 

Abstract

In2S3 films have been deposited by the successive ionic adsorption and reaction technique (SILAR) at room temperature. The films have been examined to evaluate the structural and optical properties. X-ray diffraction spectra have revealed the presence of both the α-In2S3 (cubic) and β-In2S3 (tetragonal) phases. The presence of the α-In2S3 phase at room temperature is attributed to the richness of In in the deposited materials. The presence of both phases is also supported by FESEM observations. The crystallinity of the material has been observed to improve with increasing thickness. Direct band gap of the deposits decreased from 2.89 to 2.37 eV with increasing thickness.

Acknowledgments

Authors thank the Faculty of Science Anadolu University for XRD and FESEM measurements and Buket Zor from the Architecture Department, METU, Ankara, for drawing the unit cell configuration.

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