High pressure in the synthesis and crystal growth of superconductors and III–N semiconductors

Abstract

Several high-pressure techniques applied for the synthesis and crystal growth of materials important for the future and present applications are presented. For the synthesis and thermodynamic studies of novel superconductors and III–N wide-gap semiconductors three different high-pressure techniques have been used: (i) the anvil system with solid pressure medium, (ii) the nitrogen/argon gas pressure system, and (iii) the oxygen gas pressure system.

Keywords:

• high pressure
• crystal growth
• thermodynamics
• superconductors
• III–V nitrides

Acknowledgements

I would like to thank my past and present collaborators without whom it will be impossible to perform this work. I acknowledge support of the Swiss National Science Foundation and NCCR pool MaNEP.