Abstract
The influence of Al concentration and barrier width on the transmission spectra in GaAs–Al c Ga1− c As heterostructure is studied for two different kinds of the generalized Thue–Morse multibarrier systems (GTMS). These structures provide interesting filter properties with regard to effective band-pass or stop-band (of extremely low width) circuitry. The first kind of GTMS is suitable for application as a band-pass electronic filter, while the second kind as stop-band filter. High Al concentration and large barrier width result in sharp resonances in the transmission spectrum.
Acknowledgement
The author gratefully acknowledges Prof. P. K. Mahapatra, Dr. A. Khan and Dr. R. Biswas for their valuable suggestions.