Effect of annealing temperature on photoelectrochemical properties of nanocrystalline MoBi₂(Se_0.5Te_0.5)₅ thin films

Abstract

Nanocrystalline MoBi₂(Se_0.5Te_0.5)₅ thermoelectric thin films have been deposited on ultrasonically cleaned glass and FTO-coated glass substrates by Arrested Precipitation Technique. The change in properties of MoBi₂(Se_0.5Te_0.5)₅ thin films were examined after annealing at the temperature 473 K for 3 h. The structural, morphological, compositional and electrical properties of thin films were characterized by X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive Spectroscopy, etc. Thermoelectric properties of the thin films have been evaluated by measurements of electrical conductivity and Seebeck coefficient in the temperature range 300–500 K. Our aim is to investigate the effect of annealing on behaviour of MoBi₂(Se_0.5Te_0.5)₅ thin films along with photoelectrochemical properties.

Keywords:

• EDS
• electrical conductivity
• optical properties

Acknowledgement

One of the author (MMS) is indebted to University Grant Commission for providing the departmental facility.