Investigation of solid-state reaction in Ag/Sn nanostructured thin films at room temperature

Abstract

Diffusion intermixing processes in nanostructured Ag/Sn thin-film system at room temperature were investigated by means of secondary neutral mass Spectrometry depth profiling technique. As it was confirmed by X-ray diffraction too, the reaction started already in the as-deposited sample. Since the bulk diffusion was frozen at room temperature, the Ag₃Sn phase was formed along the grain boundaries (GBs), gradually consuming the interior of grains, and was grown perpendicular to the GBs. At the same time, formation and growth of a small compact reaction layer near the interface were observed and the shift of the bordering parallel interfaces was controlled by GB diffusion. From the kinetics of the diffusion process in the above two mechanisms, both the interface velocity in the diffusion-induced grain boundary motion regime as well as the coefficient of parabolic growth in the planar growth regime were determined.

Keywords:

• GB diffusion
• thin-film reactions
• nanostructured thin films

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Funding

This work is supported by the European Union and the State of Hungary, co-financed by the European Social Fund in the framework of the TAMOP 4.2.4. A/2-11-1-2012-0001 ‘National Excellence Program’ (author G.L. Katona) and by TAMOP- 4.2.2.A-11/1/KONV-2012-0036 projects.