Abstract
The effects of the hydrogenic impurity on the electron-related non-linear optical processes in a InAs/GaAs dome-shaped quantum dot with a wetting layer under applied electric fields are studied within the density-matrix formalism. The one-electron energy levels and wave functions are calculated using the effective mass approximation and the finite element method. The non-linear optical absorption, relative refractive index change and non-linear optical rectification associated with interlevel transitions are calculated under a strong probe field excitation for both in-plane and z-polarisation of the incident light. According to our results as the electric field increases the absorption and dispersion peaks decrease and exhibit red shift. Hydrogenic impurity located at the origin induces a blue shift in the optical responses. For the optical absorption coefficient the peaks magnitude is enhanced by the impurity presence independent of the electric field strengths, whereas the non-linear optical rectification is larger in the case with impurity only for zero applied electric field.