An experimental determination of the electrical resistivity of stacking faults and lattice vacancies in gold

Abstract

The change in the electrical resistivity of gold foils due to the introduction of (a) stacking faults, and (b) lattice vacancies, is correlated with concentration counts obtained by transmission electron microscopy. The resistivity of stacking faults is found to be _ρSF = [1·8 ± 0·3] × 10⁻¹³ β Ω cm² for a stacking-fault density equal to β cm⁻¹. A lower limit for the resistivity of vacancies is _ρv = [2·4 ± 0·4] × 10⁻⁶ Ω cm/atomic % vacancies.