The dynamic observation of the formation of defects in silicon under electron and proton irradiation

Abstract

Silicon single crystal samples have been irradiated in a high voltage (1 MeV) transmission electron microscope. The defects formed are described as a function of specimen temperature and compared with similar defects formed by proton irradiation in an accelerator-electron microscope link. The defects are contrasted with those obtained with heavy ions with particular regard to possible mechanisms for the crystalline to amorphous transition which was not seen for electron and proton bombardments. For irradiations at 450°C needle-shaped precipitates were formed on {113} planes.